IRF3205 55V 110A N-Channel MOSFET Transistor – Support Documentation
The IRF3205 is a robust N-Channel power MOSFET designed for high-current applications. With its low on-resistance and fast switching capabilities, it is ideal for use in power supplies, motor controllers, and other high-efficiency circuits.
Key Features
- Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 110A @ 25°C
- Pulsed Drain Current (IDM): 390A
- Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V
- On-Resistance (RDS(on)): 8.0 mΩ @ VGS = 10V
- Power Dissipation (PD): 200W
- Operating Temperature Range: -55°C to +175°C
- Package Type: TO-220AB
Pinout Configuration
The IRF3205 comes in a TO-220AB package with the following pin configuration:
| Pin Number | Pin Name | Description |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET’s conduction state |
| 2 | Drain (D) | Current flows from Drain to Source when ON |
| 3 | Source (S) | Connected to ground or the negative side of the load |
Electrical Characteristics
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 55 | V | VGS = 0V |
| Continuous Drain Current | ID | 110 | A | TC = 25°C |
| Pulsed Drain Current | IDM | 390 | A | Pulse width limited by TJ max |
| Gate Threshold Voltage | VGS(th) | 2.0 – 4.0 | V | ID = 250µA |
| On-Resistance | RDS(on) | 8.0 | mΩ | VGS = 10V, ID = 75A |
| Input Capacitance | Ciss | 4000 | pF | VDS = 25V, VGS = 0V |
| Turn-On Delay Time | td(on) | 20 | ns | VDD = 28V, RL = 0.28Ω |
| Rise Time | tr | 101 | ns | VDD = 28V, RL = 0.28Ω |
| Turn-Off Delay Time | td(off) | 45 | ns | VDD = 28V, RL = 0.28Ω |
| Fall Time | tf | 45 | ns | VDD = 28V, RL = 0.28Ω |
Thermal Characteristics
- Junction-to-Case Thermal Resistance (RθJC): 0.75°C/W
- Junction-to-Ambient Thermal Resistance (RθJA): 62°C/W
Applications
- High-efficiency power supplies
- DC-DC converters
- Motor controllers
- Battery management systems
- Inverters
- Switching regulators
Usage Guidelines
- Gate Drive: Use a gate voltage of 10V for optimal performance. Ensure that the gate voltage does not exceed ±20V.
- Heat Dissipation: Due to high current handling, proper heat sinking is essential to maintain safe operating temperatures.
- Parasitic Inductance: Minimize lead lengths and use proper PCB layout techniques to reduce parasitic inductance, which can cause voltage spikes during switching.
- Protection: Implement appropriate protection circuits such as snubbers or clamping diodes to safeguard against voltage transients.
Frequently Asked Questions
- Can the IRF3205 be driven directly by a microcontroller?
- While the gate threshold voltage is between 2.0V and 4.0V, it’s recommended to use a gate driver to ensure the MOSFET is fully turned on, especially when driven by 3.3V or 5V logic levels.
- Is the IRF3205 suitable for high-frequency applications?
- The IRF3205 has relatively fast switching times, but for very high-frequency applications, other MOSFETs with lower gate charge and faster switching characteristics might be more appropriate.
- What precautions should be taken when using the IRF3205 in a circuit?
- Ensure proper heat sinking, avoid exceeding maximum voltage and current ratings, and implement protection against voltage spikes and transients.
Additional Notes
- Always consult the datasheet for detailed specifications and application guidelines.
- When designing circuits, consider the total gate charge and switching losses to ensure efficient operation.
- Proper PCB layout and component selection are crucial for optimal performance and reliability.